On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

Takagi, S.; Toriumi, Akira; Iwase, M.; Tango, H.

doi:10.1109/16.337449

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On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

Shared by NobleBlocks on Jan 1, 1994 • 12:00 AM UTC

Authors:

S. Takagi

Akira Toriumi

M. Iwase

Abstract

This paper reports the studies of the inversion layer mobility in n- and p-channel Si MOSFET's with a wide range of substrate impurity concentrations (10/sup 15/ to 10/sup 18/ cm/sup -3/). The validity and limitations of the universal relationship between the inversion layer mobility and the effecti...

Subject

Electron mobility

Impurity

MOSFET

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