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Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography
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Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography
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NobleBlocks
on Apr 1, 2013 • 12:00 AM UTC
Authors:
K. Inoue
,
H. Takamizawa
,
Y. Shimizu
+12 more
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Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography | NobleBlocks
