Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

A far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high-K-dielectric materials. These materials have been gaining greater attention as possible substitutes for SiO2 as gate dielectrics in aggressively scaled silicon devices. Th... View More