В ритме происходящего
Published • Jan 1, 2009
Authors:
Эманюэль Ландольт
Abstract
Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying ...
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