An Energy‐Efficient, BiFeO₃‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions

A capacitive switching behavior is observed in a Si 3 N 4 /p‐Si‐based metal–insulator–semiconductor (MIS) structure due to the electron tunneling at the Si 3 N 4 /p‐Si interface. A BiFeO 3 (BFO) layer is deposited on Si 3 N 4 /p‐Si by pulsed laser deposition technique to obtain the memcapacitive eff... View More