境界値問題が定義された領域の形状および位相最適化問題の正則化解法 (数値解析における理論・手法・応用)
Published in 数理解析研究所講究録 • Apr 1, 2009
Authors:
秀幸 畔上
Abstract
Nanostructured AIN/GaN films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AIN single-layer films are also deposited for comparison. It is found that the turn-on field of the nanostructured AIN/GaN films is considerably decreased 2 orders of magn...
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