Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors

Kanungo, Sayan; Chattopadhyay, Sanatan; Sarathi Gupta, Partha; Sinha, Kunal; Rahaman, Hafizur

doi:10.1109/ted.2016.2556081

Public

Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors

Shared by NobleBlocks on May 6, 2016 • 12:00 AM UTC

Authors:

Sayan Kanungo

Sanatan Chattopadhyay

Partha Sarathi Gupta

Abstract

Dielectrically modulated tunnel FET (DMTFET)-based biosensors show higher sensitivity but lower subthreshold current compared with their dielectrically modulated FET counterpart. In this context, the effect of use of silicon-germanium (SiGe) source and n <sup xmlns:mml="http://www.w3.org/1998/Math/M...

Subject

Subthreshold conduction

Quantum tunnelling

Doping

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