4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

Chung, Seoung-Ju; Kishi, T.; Wook Park, Jung; Yoshikawa, Masayuki; S. Park, K.; Nagase, T.; Sunouchi, K.; Kanaya, Haruichi; C. Kim, G.; Noma, K.; Young Lee, Tae; Yamamoto, Atsushi; Rho, K.-M.; Tsuchida, K.; Chung, Sung-Taek; Yi, J.; S. Kim, H.; Chun, Y.S.; Oyamatsu, H.; Joo Hong, Sung

doi:10.1109/iedm.2016.7838490

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4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

Shared by NobleBlocks on Dec 1, 2016 • 12:00 AM UTC

Authors:

Seoung-Ju Chung

T. Kishi

Jung Wook Park

Abstract

For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance control process, MTJ process, and MTJ stack engineer...

Subject

Magnetoresistive random-access memory

Stack (abstract data type)

Perpendicular

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