Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C<sup>+</sup>-ion implantation process to improve photoluminescence intensity

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

doi:10.7567/jjap.57.04fb03

Public

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C<sup>+</sup>-ion implantation process to improve photoluminescence intensity

Shared by NobleBlocks on Mar 8, 2018 • 12:00 AM UTC

Authors:

Tomohisa Mizuno

Yuhsuke Omata

Rikito Kanazawa

Abstract

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photo...

Subject

Atom probe

Materials science

Photoluminescence

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