Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Jouha, Wadia; El Oualkadi, Ahmed; Dherbécourt, Pascal; Joubert, Eric; Masmoudi, Mohamed

doi:10.1109/tpel.2018.2822939

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Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Shared by NobleBlocks on Apr 4, 2018 • 12:00 AM UTC

Authors:

Wadia Jouha

Ahmed El Oualkadi

Pascal Dherbécourt

Abstract

This letter proposes an accurate parameter extraction method based on the Levenberg-Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method to study the static behavior of SiC power mosfets according to the temperature and the input voltage. The...

Subject

Silicon carbide

MOSFET

Levenberg–Marquardt algorithm

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