Влияние нарушенных слоев на диэлектрические свойства конденсаторных структур на основе сегнетоэлектрических пленок

Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including non-volatile memory, piezoelectric micro-actuators, sensors etc. Miniaturization of such devices requires a reduction in the ferroelectric layer thickness, which reduces the major characteristics of fe... View More