Поверхностный тепловой интерфейс для мощных арсенид-галлиевых гетероструктурных полевых транзисторов

AbstractApplication of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of additional efforts aimed at a decrease in the t... View More