High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress

We report a dual-gate, amorphous In-Ga-Sn-O (aIGTO) thin-film transistor (TFT) exhibiting high field-effect mobility (μFE) and very low subthreshold swing. The TFT has a bottom-gate having 5 μm overlap with source/drain (S/D) and a top-gate with 0.5 μm offset with S/D electrodes. The bottom-gate pot... View More