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Обнаружение термовольтаического эффекта в гетероструктуре на основе теллурида свинца

Published in Письма в журнал технической физики • Dec 20, 2019
NobleIDNI0P92W69R02S27
Authors:
В.В. Каминский
,
С.М. Соловьёв
,
Н.М. Судак

Abstract

Abstract The thermovoltaic effect was detected in a heterostructure based on a semiconductor material used in medium-temperature thermoelectric converters (PbTe). A voltage of ~0.015 V was generated at constant temperature T = 390 K. At T = 732 K, the voltage was 0.11 V.

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