Высокоомный антимонид галлия, полученный методом газофазной эпитаксии из металлорганических соединений
Published in Физика и техника полупроводников • Jan 1, 2019
Authors:,,
Р.В. Левин
A. S. Vlasov
A. N. Smirnov
Abstract
The paper presents the results of studies of grown epitaxial GaSb layers by MOCVD method at a ratio of TMSb/TEGa from 1 to 50. When the ratio TMSb/TEGa=50 were grown epitaxial GaSb layers with a specific electrical resistance of 400 Ω•cm. Crystalline perfection of these layers was evaluated by sever...
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