Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

Recent experiments suggest that Mg condensation at threading dislocations induces current leakage, leading to degradation of GaN-based power devices. To investigate this, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that... View More