Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

Herein, tunneling aluminum oxide (Al 2 O 3 ) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron‐doped surface. These very thin Al 2 O 3 films (1.5–3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused ... View More