Влияние никеля на время жизни носителей заряда в кремниевых солнечных элементах
Published in Физика и техника полупроводников • Oct 18, 2021
NobleIDNI8P96W04R95S50
Authors:,,
М.К. Бахадырханов
З.Т. Кенжаев
С.В. Ковешников
Abstract
It has been shown experimentally that nickel clusters on the surface of a silicon sample contain a large amount of oxygen and recombination impurities - Cu, Fe, Cr, which shows good gettering properties of clusters. The optimum temperature of nickel diffusion into silicon is determined - Т=800-850 °...