Рост концентрации носителей заряда в тонких пленках висмута
Published in Физика и техника полупроводников • Nov 22, 2021
Authors:,,
Е. В. Демидов
В.М. Грабов
В.А. Комаров
Abstract
The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77K under the two-band approximation and the assumption that the charge carri...
Finding related papers...
Discussions
(0)No comments yet
Be the first to share your thoughts!