Взаимодействие дислокаций в кремнии с примесными атомами, влияющими на электронные свойства и подвижность дислокаций
Published in Tambov University Reports Series Natural and Technical Sciences • Jan 1, 2010
Authors:
Орлов Валерий Иванович
Abstract
The interaction of dislocations with intrinsic and impurity point defects in silicon single crystals is still being an object of intensive study. One of the reasons why researches in this field are urgent is the trend toward increasing of the diameter of silicon single crystals being grown. This con...
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